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Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 11

A Model For Hydrogen-Induced Piezoelectric Effect In Inp Phemts (Article)
Subject: Hmet , Hydrogen
Author: Sander Mertens     
page:      1849 - 1855
Fabrication Of Gaas Misfet With Nm-Thin Oxidized Layer Formed By Uv And Ozone Process (Article)
Subject: Compound Optoelectronics Displays And Imaging
Author: Koicki Liyama     
page:      1856 - 1862
A Simple Method For Measuring The Cell Gap Of In Reflective Twisted Nematic Lcd (Article)
Subject: Cell Design , Reflective Memory System
Author: X. Q Zhu     
page:      1863 - 1867
Two Types Of Neural Electron Traps Generated In The Gate Silicon Dioxide (Article)
Subject: Breakdown Voltage
Author: J. Zhang     
page:      1868 - 1875
Experimental Evidence For Nonlucky Electron Model Effect In 0.15-Um Nmosfets (Article)
Subject: Mosfet
Author: J H Lee     
page:      1876 - 1881
Impact Of Lateral Source/Drain Abruptness On Devices Performance (Article)
Subject: Lateral Source
Author: W. C Kwong     
page:      1882 - 1890
Damascene W/Tin Gate Mosfets With Improved Performance For 0.1um Regime (Article)
Subject: Midgap Gate Material
Author: Zhao Li     
page:      1891 - 1896
A Computational Study Of Thin-Body, Double -Gate Schotty Barrier Mosfets (Article)
Subject: Mosfet , Nanotechnology Potential
Author: L. S Guo     
page:      1897 - 1902
Electrical Properties Of 1.5nm Sion Gate-Dielectric Using Radical Oxygen And Radical Nitrogen (Article)
Subject: Dielectric Films
Author: M Togo     
page:      1903 - 1909
Role Of Positive Trapped Charge In Stress-Induced Leakage Current For Flash Eeprom Devices (Article)
Subject: Flash Eeprom
Author: J. Wang     
page:      1910 - 1916
High Performance Of Novel Oxygen Diffusion Barrier Materials For Future High-Density Dynamic Random Access Memory Devices (Article)
Subject: Capacitance
Author: K.T. Yoon     
page:      1917 - 1927
Physics-Based Analytical Modeling Of Potential And Electrical Field Distribution In Dual Material Gate (Dmg)-Mosfet (Article)
Subject: Carrier Transport Efficiency , Dual Material Gate Offset Voltage , Work Function
Author: Nirmal R Saxena      A Haldar     
page:      1928 - 1938
Impact Of Programming Charge Distribution On Threshold Voltage And Subthreshold Slope Of Nrom Memory Cells (Article)
Subject: Device Simulation , Flash Memories
Author: L Larcher     
page:      1935 - 1946
Improvimg The Electrical Integrity Of Cu-Cosi2 Contacted N+P Junction Diodes Using Nitrogen-Incorporated Ta Films As A Diffusion Barrier (Article)
Subject: Cobalt Oxides , Copper Conductor , Diffusion Barriers
Author: Wei-Bin Yang     
page:      1947 - 1954
Voltage And Temperature-Dependent Gate Capacitance And Current Model: Application To Zro2 N-Channel Mos Capacitor (Article)
Subject: High-K Gate Dielectric , Leakage Currents
Author: Zijie Fan     
page:      1969 - 1978
Dc Spice Model For Nanocrystalline And Microcrystalline Silicon Tfts (Article)
Subject: Microcrystalline , Nanocrystalline Forming
Author: D. Dosev     
page:      1979 - 1984
A Study Of Stress-Induced P+/N Salicided Junction Leakage Failure And Optimized Process Conditions For Sub-0.15-Um Cmos Technology (Article)
Subject: Parkdale Develop Designer Fiber , Young'S Modulus
Author: J. -S. Lee     
page:      1985 - 1992
Complementry Metal-Ode -Semiconductor Thin-Film Transistor Circuits From A High-Temperature Polycrystalline Silicon Process On Steel Foil Substrates (Article)
Subject: Complentry Model , Metal Oxide
Author: Tom Wu     
page:      1993 - 2000
A Power-Optimal Insertion Methodology For Global Interconnects In Nanometer Designs (Article)
Subject: Buffer Insertion
Author: R. K. Banerjee     
page:      2001 - 2007
High Power - Optimal Repeater Insertation Methodology For Global Interconnects In Nanometer (Article)
Subject: Buffer Insertion , Delay Optimization
Author: R. K. Banerjee     
page:      2001 - 2007
High-Performance Polymer Tfts Printed On A Plastic Substrate (Article)
Subject: Dual Layer , Micro Contact
Author: C Park      A Kim     
page:      2008 - 2015
Amomalous Phosphorous Diffusion (Article)
Subject: Diffusion
Author: K Suzuki     
page:      2031 - 2034
Determining The Location Of Localized Defect In The Perpendicular Junction Configuration With The Use Of Electron Beam Induced Current (Article)
Subject: Electron Beam Application
Author: P B Phua     
page:      2036 - 2046
A No-Snapback Ldmosfet With Automotive Esd Endurance (Article)
Subject: Breakdown Voltage , Electro Chemical Polishing
Author: Ken Kawamoto     
page:      2047 - 2053
High-Power 4h-Sic Jbs Rectifiers (Article)
Subject: Schottky Collector , Merged
Author: R. K Singh     
page:      2054 - 2063
Sic-Gto Thyristor Gate And Drift-Region Dopant Polarity Analysis Using Electrothermal Simulation (Article)
Subject: Power Semiconductor Switches
Author: J.V. Shah     
page:      2064 - 2069
Quantitative Internal Thermal Energy Mapping Of Semi Conductor Devices Under Short Current Stress Using Backside Laser Interferometry (Article)
Subject: Electromagnetic Charge
Author: Dionyz Pogany     
page:      2070 - 2079
Maximum Allowable Bulk Defect Density For Generation-Recombination Noise-Free Devices Operation (Article)
Subject: Carrier Trapping
Author: Aili Hou     
page:      2080 - 2082
A Statistical Model For Silc In Flash Memories (Article)
Subject:
Author: Daniele Ielmini     
page:      - - -